Search for: All records

III-Nitride light-emitting diodes (LEDs) and laser diodes (LDs) are light sources covering ultraviolet (UV) and visible spectral regimes, which offer benefits including compact size, wavelength tuning, long lifetime, and sustainability. UV light sources have a range of applications in the fields of biology and medicine, such as sterilization and the purification of both water and air, where visible light emitters have been used in miniaturized photonic devices for optogenetic applications and other light-based therapies. Those III-Nitride light sources provide tremendous potential to be integrated with silicon (Si)-based lab-on-a-chip (LOC) technology, which typically requires the coupling of an external light source through fiber optic cable, limiting the field deployment of the devices. Integrating an on-chip III-Nitride light source with these devices opens the door to complete LOC technology, allowing for the simultaneous detection of multiple bio agents on a single platform without the need for external photonic sources. While most integrated microsystems still rely on wafer bonding at the device or wafer level, one promising method to achieve the integration of III-nitride UV and visible LEDs and LDs with conventional Si photonics and complementary metal-oxide-semiconductor (CMOS) platforms is through the use of micro-transfer printing (µTP). µTP has greater tolerances in alignment than techniques such as flip-chip integration and allows for the transfer of many devices at once. Additionally, the µTP process does not call for the complex and high temperature processing required for standard wafer bonding or necessitate complicated growth and lattice matching needed for monolithic integration. To enable µTP, an elastomeric, such as polydimethylsiloxane (PDMS), is utilized to create a transfer stamp that is employed for the precise selection of fabricated semiconductor devices for transfer from a source wafer to a target wafer. III-Nitride LEDs or LDs epitaxial structures are grown on a source wafer and fabricated through the creation of tethered coupons, or individual devices. This is accomplished by utilizing III-nitride materials grown on (111) Si. These devices can be fabricated through standard lithography and etching processes, etching down to the (111) Si substrate. A larger mesa can be patterned and etched into the Si substrate, exposing the sidewalls for wet chemical etching. The finished devices are then encapsulated in SiN_xthrough plasma enhanced chemical vapor deposition (PECVD), which is patterned through standard lithography to define tethers and anchors for the subsequent wet etch. The fabricated devices are oriented in such a way as to take advantage of the difference in etch rates (>100x) of Si(110) and Si(111) in potassium hydroxide (KOH), where etching proceeds along the <110> direction. After KOH etching, the devices are left encapsulated in SiN_xand suspended over the silicon substrate with an air gap, while the anchors and tethers are left largely unaffected.This enables the elastomer stamp to press down, breaking the tethers, and releasing the device. The stamp is then able to transfer the device to a target wafer that has been coated and patterned with InterVia, a spin-on dielectric material that acts as an adhesion layer. The stamp is pressed into the target wafer in such a way that the device is adhered to the target and released from the elastomer stamp. This technique can be applied to LEDs and LDs grown on (111) Si, allowing for the heterogeneous integration of III-nitride LED and LDs with conventional CMOS and Si photonic integrated circuits (PICs) as on-chip light sources, opening the door to complete LOC technology without the need for additional external photonic sources. 

To fully capitalize on the unique properties of 2D materials, cost-effective techniques for producing high-quality 2D flakes at scale are crucial. In this work, we show that dry ball-milling, a commonly used powder-processing technique, can be effectively and efficiently upgraded into an automated exfoliation technique. It is done by adding polymer as adhesives into a ball mill to mimic the well-known tape exfoliation process, which is known to produce 2D flakes with the highest quality but is limited by its extremely low efficiency on large-scale production. Seventeen types of commonly seen polymers, including both artificial and natural ones, have been examined as additives to dry ball-mill hexagonal boron nitride. A parallel comparison between different additives identifies low-cost natural polymers such as starch as promising dry ball-mill additives to produce ultrathin flakes with the largest aspect ratio. The mechanical, thermal, and surface properties of the polymers are proposed as key features that simultaneously determine the exfoliation efficiency, and their ranking of importance in the mechanical exfoliation process is revealed using a machine learning model. Finally, the potential of the polymer-assisted ball-mill exfoliation method as a universal way to produce ultra-thin 2D nanosheets is also demonstrated. 

Abstract Most oceanic lead (Pb) is from anthropogenic emissions into the atmosphere deposited into surface waters, mostly during the past two centuries. The space‐ and time‐dependent emission patterns of anthropogenic Pb (and its isotope ratios) constitute a global geochemical experiment providing information on advective, mixing, chemical, and particle flux processes redistributing Pb within the ocean. Pb shares aspects of its behavior with other elements, for example, atmospheric input, dust solubilization, biological uptake, and reversible exchange between dissolved and adsorbed Pb on sinking particles. The evolving distributions allow us to see signals hidden in steady‐state tracer distributions. The global anthropogenic Pb emission experiment serves as a tool to understand oceanic trace element dynamics. We obtained a high‐resolution (5° station spacing) depth transect of dissolved Pb concentrations and Pb isotopes from Alaska (55°N) to just north of Tahiti (20°S) near 152°W longitude. The sections reveal distinct sources of Pb (American, Australian, and Chinese), transport of Australian style Pb to the water mass formation region of Sub‐Antarctic Mode Water which is advected northward, columnar Pb isotope contours due to reversible particle exchange on sinking particles from high‐productivity particle veils, and a gradient of high northern deep water [Pb] to low southern deep water [Pb] that is created by reversible exchange release of Pb from sinking particles carrying predominantly northern hemisphere Pb.²⁰⁸Pb/²⁰⁶Pb versus²⁰⁶Pb/²⁰⁷Pb isotope relationships show that most oceanic Pb in the North Pacific is from Chinese and American sources, whereas Pb in the South Pacific is from Australian and American sources.